4 Inch SiC Substrate N-type

Brevis descriptio:

Semicera offert amplis uncta 4H-8H SiC. Multos annos opificem et elit productorum ad industrias semiconductoris et photovoltaicae fuimus. Nostri principales fructus includunt: Silicon carbide etch bracteae, carbida silicon umbilicus, carbida lagana navigia pii (PV & semiconductor), fistulae carbidi pii fornacis, paxulae siliconis carbide cantilever, carbida pilica chucks, carbida pii trabibus ac tunicas CVD SiC TaC coatingit. Plurima mercatus Europae et Americanae tegunt. Expectamus diu-terminus tuus esse particeps in Sina.

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Product Detail

Product Tags

Silicon carbide (SiC) una cristallus materia magnam lacunam latitudo (~Si 3 times), princeps scelerisque conductivity (~Si 3.3 temporibus vel GaAs 10 times), alta electronica satietatem migrationis rate (~Si 2.5 times), alta naufragii electrici ager (Si X temporibus vel GaAs V temporibus) et aliae proprietates praestantes.

energia semicera clientibus cum qualitate Conductiva (Conductiva), Semi-insulans (Semi-insulating), HPSI (Purity semi-insulating) carbidi pii substrato; Praeterea clientibus homogeneis et heterogeneis pii carbide epitaxialis schedae praebere possumus; Nos quoque schedam epitaxialem secundum specificas clientium necessitates customizare possumus, et quantitas ordinis minima nulla est.

Items	Productio	Inquisitionis	phantasma
Crystal Parameters
Polytypus	4H
Superficiem sexualis errore	<11-20 >4±0.15°
Electrical Parameters
Dopant	n-genus Nitrogenium
Resistentia	0.015-0.025ohm·cm
Mechanica Parametri
Diameter	99.5 - 100mm
Crassitudo	350±25 μm
Prima plana propensionis	[1-100]±5°
Prima plana longitudo	32.5±1.5mm
Secundarium plana positione	90° CW a primo plano ± 5°. Pii faciem sursum
Secundarium planae longitudinis	18±1.5mm
TTV	≤5 μm	≤10 μm	≤20 μm
LTV	≤2 μm(5mm*5mm)	≤5 μm(5mm*5mm)	NA
Arcum	-15μm ~ 15μm	-35μm ~ 35μm	-45μm ~ 45μm
Warp	≤20 μm	≤45 μm	≤50 μm
Frons (Si-face) asperitas (AFM)	Ra≤0.2nm (5μm*5μm)
Structure
Micropipe density	≤1 ea/cm2	≤5 ea/cm2	≤10 ea/cm2
Metallum immunditiae	≤5E10atoms/cm2		NA
BPD	≤1500 ea/cm2	≤3000 ea/cm2	NA
TSD	≤500 ea/cm2	≤1000 ea/cm2	NA
Ante Quality
Front	Si
Superficiem metam	Si-face CMP
Particulas	≤60ea/laganum (size≥0.3μm)	NA
Exasperat	≤2ea/mm. Cumulativo longitudo ≤Diameter	Cumulative length≤2*Diameter	NA
Orange cortices / foveas / maculas / striations / rimas / contagione	Nullus		NA
Ora eu / indents / fractura / hex p	Nullus		NA
Polytypus areis	Nullus	Cumulativo area≤20%	Cumulativo area≤30%
Ante laser vestigium	Nullus
Back Quality
Retro metam	C-faciem CMP
Exasperat	≤5ea/mm,Cumulative length≤2*Diameter	NA
Retro defectus (ore eu / indents)	Nullus
Retro asperitatem	Ra≤0.2nm (5μm*5μm)
Back laser notati	I mm (a summo ore)
Ore
Ore	Chamfer
Packaging
Packaging	Sacculus interior nitrogeni repletus est, et sacculus exterior vacuumedtur. laganum multi-reta epi-parata.
*Nota "NA" significat petitionem nullam Items not mentioned may refer to SEMI-STD.