Silicon carbide (SiC) una cristallus materia magnam lacunam latitudo (~Si 3 times), princeps scelerisque conductivity (~Si 3.3 temporibus vel GaAs 10 times), alta electronica satietatem migrationis rate (~Si 2.5 times), alta naufragii electrici ager (Si X temporibus vel GaAs V temporibus) et aliae proprietates praestantes.
energia semicera clientibus cum qualitate Conductiva (Conductiva), Semi-insulans (Semi-insulating), HPSI (Purity semi-insulating) carbidi pii substrato; Praeterea clientibus homogeneis et heterogeneis pii carbide epitaxialis schedae praebere possumus; Nos quoque schedam epitaxialem secundum specificas clientium necessitates customizare possumus, et quantitas ordinis minima nulla est.
| Items | Productio | Inquisitionis | phantasma |
| Crystal Parameters | |||
| Polytypus | 4H | ||
| Superficiem sexualis errore | <11-20 >4±0.15° | ||
| Electrical Parameters | |||
| Dopant | n-genus Nitrogenium | ||
| Resistentia | 0.015-0.025ohm·cm | ||
| Mechanica Parametri | |||
| Diameter | 99.5 - 100mm | ||
| Crassitudo | 350±25 μm | ||
| Prima plana propensionis | [1-100]±5° | ||
| Prima plana longitudo | 32.5±1.5mm | ||
| Secundarium plana positione | 90° CW a primo plano ± 5°. Pii faciem sursum | ||
| Secundarium planae longitudinis | 18±1.5mm | ||
| TTV | ≤5 μm | ≤10 μm | ≤20 μm |
| LTV | ≤2 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | NA |
| Arcum | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤20 μm | ≤45 μm | ≤50 μm |
| Frons (Si-face) asperitas (AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Structure | |||
| Micropipe density | ≤1 ea/cm2 | ≤5 ea/cm2 | ≤10 ea/cm2 |
| Metallum immunditiae | ≤5E10atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Ante Quality | |||
| Front | Si | ||
| Superficiem metam | Si-face CMP | ||
| Particulas | ≤60ea/laganum (size≥0.3μm) | NA | |
| Exasperat | ≤2ea/mm. Cumulativo longitudo ≤Diameter | Cumulative length≤2*Diameter | NA |
| Orange cortices / foveas / maculas / striations / rimas / contagione | Nullus | NA | |
| Ora eu / indents / fractura / hex p | Nullus | NA | |
| Polytypus areis | Nullus | Cumulativo area≤20% | Cumulativo area≤30% |
| Ante laser vestigium | Nullus | ||
| Back Quality | |||
| Retro metam | C-faciem CMP | ||
| Exasperat | ≤5ea/mm,Cumulative length≤2*Diameter | NA | |
| Retro defectus (ore eu / indents) | Nullus | ||
| Retro asperitatem | Ra≤0.2nm (5μm*5μm) | ||
| Back laser notati | I mm (a summo ore) | ||
| Ore | |||
| Ore | Chamfer | ||
| Packaging | |||
| Packaging | Sacculus interior nitrogeni repletus est, et sacculus exterior vacuumedtur. laganum multi- reta epi-parata. | ||
| *Nota "NA" significat petitionem nullam Items not mentioned may refer to SEMI-STD. | |||
