Silicon Carbide Coating
Nostra Vapor Chemical Depositio (CVD) Pii Carbide (SiC) vestis est valde durabilis et obsistens iacuit, ideal pro ambitus corrosionis et resistentiae scelerisque postulans.Pii Carbide coatingin bracteis stratis variis subiectis applicatur per processum CVD, praestantiorem indolem praestandi praebens.
Key Features
-Exceptional Puritas: Iactantia an ultra-puram compositionem99.99995%, ourSic coatingminimizes contagione periculum sensitivum in operationibus semiconductoris.
-Superior Resistentia: Praeclaram resistentiam utriusque indumenti et corrosionis exhibet, eamque perficit ad unctiones chemicae et plasma provocandas.
Maximum scelerisque Conductivity: Praestare certam observantiam sub extremis temperaturis ob praecipuas possessiones suas scelerisque.
-Dimensional Stability: integritatem structuram conservat per amplis temperaturis, propter suam humilem expansionem scelerisque coefficientem.
-Enhanced duritia: Duritiam rating de40 GPaNoster SiC coatingit ictum et abrasionem significant.
-Smooth Superficiem Conclusio: Speculi similem metam praebet, minuens particulam generationis et augendi efficientiam perficiendi.
Applications
Semicera Sic coatingsvariis gradibus semiconductoris adhibentur, inter quas:
-DUXERIT Chip Fabricatio
-Polysilicon Productio
-Semiconductor Crystal Augmentum
-Pii et SiC Epitaxy
-Scelerisque Oxidationis et Diffusionis (TO&D)
SIC-coactatis suppeditamus componentibus ex viribus graphite isostatico, fibra carbonis carbonis confirmata et 4N recrystallata carbidi pii, ad reactoria fluidata formanda, reactoria;STC-TCS convertentium, CZ ponderum unitas, linteum laganum SiC, paxillum SiCwafer, tubum laganum SiC, et laganum in PECVD, epitaxy pii, processuum MOCVD..
Beneficia
-Extended Lifespan: Significanter redigit instrumentum ad tempus et sustentationem gratuita, augens altiorem efficientiam productionis.
-Improved Quality: Summus puritatem consequitur superficies necessarias ad processum semiconductorem, ita productum qualitatem boosting.
-Increased Efficiency: Optimizes scelerisque ac CVD processibus, unde in brevioribus cycli temporibus ac superioribus cedit.
Technical Specifications
-Structure: FCC β phase polycrystaline, maxime (111) orientatur
-Density: 3.21 g/cm³
-Hardness: 2500 Vickes duritiem (500g onus)
-Fracture Toughness: 3.0 MPa·m1/2
-Thermal Expansion Coefficiens (100-600 ° F): 4.3 x 10-6k-1
-Elastic Modulus (1300℃):435 GPa
-Typical film Crassitudo:100 µm
-Surface Roughness:2-10 µm
Puritas Data (Missa Spectroscopia mensurata Glouc Dimittite)
| Elementum | ppm | Elementum | ppm |
| Li | < 0.001 | Cu | < 0.01 |
| Be | < 0.001 | Zn | < 0.05 |
| Al | < 0.04 | Ga | < 0.01 |
| P | < 0.01 | Ge | < 0.05 |
| S | < 0.04 | As | < 0.005 |
| K | < 0.05 | In | < 0.01 |
| Ca | < 0.05 | Sn | < 0.01 |
| Ti | < 0.005 | Sb | < 0.01 |
| V | < 0.001 | W | < 0.05 |
| Cr | < 0.05 | Te | < 0.01 |
| Mn | < 0.005 | Pb | < 0.01 |
| Fe | < 0.05 | Bi | < 0.05 |
| Ni | < 0.01 |
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