Inductione Calefacta Epitaxy Reactor System

Brevis descriptio:

Semicera praebet facultatem comprehensivam susceptorum et componentium graphitarum destinatorum variis reactoribus epitaxy.

Per opportunas societates cum industria ducens OEMs, ampla peritia materiarum, et facultates fabricandi provectas, Semicera consilia formandam tradit ad specifica requisita applicationis tuae. Nostrum officium ad excellentiam efficit ut optimas solutiones recipias pro necessitate reactoris epitaxy.

 


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Nostra societas praebetSic coatingopera processus processus in superficie graphite, ceramicorum et aliarum materiarum methodo CVD, ita ut gasorum specialium carbo et silicon continentes caliditas calidissimae ad puritatem Sic moleculae altae obtineant, quae in superficie materiarum iactatarum deponi possunt ut formant.SiC tutela iacuitpro dolio genus hy pnotic.

 

Praecipua lineamenta:

I .High puritas SiC graphite iactaret

2. Superior calor resistentia & scelerisque uniformitatem

3. FineSic crystallum iactaretad leni

4. High vetustatem in chemica purgatio

 
Inductione Calefacta Epitaxy (LPE) Reactor System

Principalis FormulariumCVD-SIC Coating

Sic-CVD Properties

Crystal Structure FCC β phase
Density g/cm 3.21
duritia Vickers duritia 2500
Frumenti Size μm 2~10
Puritas chemica % 99.99995
Calor Capacitas J·kg-1 ·K-1 640
Sublimatio Temperature 2700
Fortitudo Felix MPa (RT 4-punctum) 415
Modulus Gpa (4pt bend, 1300℃) 430
Scelerisque Expansion (CTE) 10-6K-1 4.5
Scelerisque conductivity (W/mK) 300

 

 
2--cvd-sic-puritatem--99-99995-_60366
5----sic-crystal_242127
Locus Semicera Opus
Locus operis semicera 2
Apparatus armorum
Rhoncus processus, purgatio chemica, CVD coating
Nostra religio

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