Long Service Life SiC Coated Graphite Portitorem Solar Wafer

Long Service Life SiC Coated Graphite Portitorem Solarem Wafer Featured Image

Brevis descriptio:

Silius carbide novum genus ceramicorum est magno sumptu effectus et praestantia materiarum proprietatum. Ob features sicut altae roboris et duritiae, caliditas resistentiae, magna conductivity et chemica corrosio scelerisque resistentia, Silicon Carbide omnia media chemica fere sustinere potest. Ideo, SIC late utuntur in fodienda olei, chemica, machinatione et airspace, etiam energia nucleari et militari, peculiares suas postulationes in SIC habent. Aliquid normali applicatione offerre possumus annulos obsignantes ad sentinam, valvam et armaturam tutelarem etc.

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Product Detail

Product Tags

commoda

Princeps caliditas oxidationis resistentia
Corrosion resistentia praeclara
Bonum Abrasionis resistentia
Princeps coefficiens caloris conductivity
Levitas, humilis densitas
Alta duritia
Lorem amet.

Applications

-War-repugnans campus: frutex, lamina, sandblasting COLLUM, cyclus oblinit, dolium stridor, etc.
-High Temperature Field: siC Slab, Exstinguitur Fornax Tubus, Radiant Tube, Fuscus, Calefactio Elementum, Rollerus, Radius, Calor Commutator, Frigidi Aeris Pipe, Exuro Nozzle, Thermocouple Tubus, SiC Navis, Kiln Car Structura, Setter, etc.
-Silicon Carbide Semiconductor: cymba lagana SiC, sic chuck, sic paxillum, sic cassette, sic diffusio tubi, laganum furca, patella suctio, guideway, etc.
-Silicon Carbide Sigillum Campi: omnia genera signandi anulum, portantes, frutices, etc.
- Campus Photovoltaicus: Cantilever Paddle, Molendum Ferocactus, Silicon Carbide Rollerus, etc.
-Lithium Pugna Field

WAFER (1)

laganum (2)

Corporalia De Proprietatibus Sic

Property	Precium	Methodus
Density	3.21 g/cc	Sink-natat et dimensio
Imprimis calor	0.66 J/g °K	Pulsus mico laser
Flexurae vires	450 MPa560 MPa	4 punctum anfractus, RT4 punctum flexus, 1300°
Fractura spissitudo	2.94 MPa m1/2	Microindentation
duritia	2800	Vicker's, 500g onus
Elasticus ModulusYoung's Modulus	450 GPa430 GPa	4 pt flecti, RT4 pt flecti, MCCC °C
Frumenti magnitudine	2 - 10 µm	SEM

Scelerisque Proprietatibus SiC

Scelerisque Conductivity	250 W/m °K	Modus laser mico, RT
Scelerisque Expansion (CTE)	4.5 x 10-6 °K	Locus temp ad 950 °C, silica dilatometer

Technical Parameters

Item	Unitas	Data
Item	Unitas	RBSiC(SiSiC)	NBSiC	SSiC	RSiC	OSiC
SiC content	%	85	75	99	99.9	≥99
Liberum Pii content	%	15	0	0	0	0
Max ministerium temperatus	℃	1380	1450	1650	1620	1400
Density	g/cm*³	3.02	2.75-2.85	3.08-3.16	2.65-2.75	2.75-2.85
Apertum poros	%	0	13-15	0	15-18	7-8
Tendens vires 20℃	pa	250	160	380	100	/
Tendens robur 1200℃	pa	280	180	400	120	/
Modulus elasticitatis 20℃	Gpa	330	580	420	240	/
Modulus elasticitatis 1200℃	Gpa	300	/	/	200	/
Scelerisque conductivity 1200℃	W/mK	45	19.6	100-120	36.6	/
Coefficiens scelerisque expansion	K^-1X10^-6	4.5	4.7	4.1	4.69	/
HV	Kg/m^m2	2115	/	2800	/	/

CVD carbidi pii in superficie exteriore productorum carbidi siliconis ceramici recrystallized potest attingere puritatem plus quam 99,9999% ut obviam necessitatibus clientibus in industria semiconductoris.