Semiconductor recrystallized navicularii pii carbide

Brevis descriptio:

Semicera Energy Technologia Co, Ltd. est principale in lagano speciali et semiconductori consumabilium provectorum.Tibi dediti sumus ut products summus qualitas, certa, amet, semiconductor vestibulum;photovoltaic industriamet alia prata cognata.

Nostra producta linea includit SiC/TaC productos graphites et ceramicos obductis, varias inclusas materias ut carbidam pii, nitridem pii, et oxydatum aluminium et etc.

Sicut creditum supplementum momentum consumables in processu fabricando intellegimus, et fructus tradendis commendamur, quae signa maximae qualitates conveniunt ad necessitates clientium nostrorum implendas.


Product Detail

Product Tags

Silius carbide novum genus ceramicorum est magno sumptu effectus et praestantia materiarum proprietatum. Ob features sicut altae roboris et duritiae, caliditas resistentiae, magna conductivity et chemica corrosio scelerisque resistentia, Silicon Carbide omnia media chemica fere sustinere potest. Ideo, SIC late utuntur in fodienda olei, chemica, machinatione et airspace, etiam energia nucleari et militari, peculiares suas postulationes in SIC habent. Aliquid normali applicatione offerre possumus annulos obsignantes ad sentinam, valvam et armaturam tutelarem etc.

Possumus designare et fabricare secundum dimensiones specificas cum bona qualitate et rationabili tempore libera.

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Advantages:

Princeps caliditas oxidationis resistentia

Corrosion resistentia praeclara

Bonum Abrasionis resistentia

Princeps coefficiens caloris conductivity
Levitas, humilis densitas
Alta duritia
Lorem amet.

Pii carbide navi (VIII)

Applicationes:

-War-repugnans campus: frutex, lamina, sandblasting COLLUM, cyclus oblinit, dolium stridor, etc.

-High Temperature Field: siC Slab, Exstinguitur Fornax Tubus, Radiant Tube, Fuscus, Calefactio Elementum, Rollerus, Radius, Calor Commutator, Frigidi Aeris Pipe, Exuro Nozzle, Thermocouple Tubus, SiC Navis, Kiln Car Structura, Setter, etc.

-Military Bulletproof Field

-Silicon Carbide Semiconductor: cymba lagana SiC, sic chuck, sic paxillum, sic cassette, sic diffusio tubi, laganum furca, patella suctio, guideway, etc.

-Silicon Carbide Sigillum Campi: omnia genera signandi anulum, portantes, frutices, etc.

- Campus Photovoltaicus: Cantilever Paddle, Molendum Ferocactus, Silicon Carbide Rollerus, etc.

-Lithium Pugna Field

Parametri technicae:

2

Materia Datasheet

材料Materia

R-SiC

使用温度Opus temperatus (°C)

1600°C (氧化气氛Oxidizing environment)

1700°C (还原气氛Reducing environment)

Sic含量SiC content (%)

> 99

自由Si含量Free Si contentus (%)

< 0.1

体积密度Mole densitatis (g/cm3)

2.60-2.70

气孔率Apparens porositas (%)

< 16

抗压强度Robora comminuendi (MPa)

> 600

常温抗弯强度Frigus inflexio (MPa)

80-90 (20°C)

高温抗弯强度Inflexio caloris vires (MPa)

90-100 (1400°C)

热膨胀系数

Scelerisque dilatatio coefficiens @1500°C (10-6/°C)

4.70

导热系数Scelerisque conductivity @1200°C (W/mK)

23

杨氏模量Modulus elasticus (GPa)

240

抗热震性Scelerisque inpulsa resistentia

很好perquam bonum


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