Semiconductor cymbam laganum carbide silicon

Description:

Weitai SiC producti componentes habent repugnantiam oxidationis altam, resistentiam chemicae stabilitatis et caloris, cum excellentibus notis stabilitatis usque ad 2000 gradus.Late adhibentur in scaphis lagani, fistulae et lagana simulationis quae lagana siliconis substituunt quae requiruntur in processu materiae semiconductoris fabricando, et etiam late in fixture productorum adhibitorum ad altas temperaturas adhibentur.Late usus est in instrumento productionis semiconductoris, agro autocineto, agro industriae aliisque agris.


Product Detail

Product Tags

Silius carbide novum genus ceramicorum est magno sumptu effectus et praestantia materiarum proprietatum.Ob features sicut altae roboris et duritiae, caliditas resistentiae, magna conductivity et chemica corrosio scelerisque resistentia, Silicon Carbide omnia media chemica fere sustinere potest.Ideo, SIC late utuntur in fodienda olei, chemica, machinatione et airspace, etiam energia nucleari et militari, peculiares suas postulationes in SIC habent.Aliquid normali applicatione offerre possumus annulos obsignantes ad sentinam, valvam et armaturam tutelarem etc.

Possumus designare et fabricare secundum dimensiones specificas cum bona qualitate et rationabili tempore libera.

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Advantages:

Princeps caliditas oxidationis resistentia

Corrosion resistentia praeclara

Bonum Abrasionis resistentia

Princeps coefficiens caloris conductivity
Levitas, humilis densitas
Alta duritia
Lorem amet.

 

Applicationes:

-War-repugnans campus: frutex, lamina, sandblasting COLLUM, cyclus oblinit, dolium stridor, etc.

-High Temperature Field: siC Slab, Exstinguitur Fornax Tubus, Radiant Tube, Fuscus, Calefactio Elementum, Rollerus, Radius, Calor Commutator, Frigidi Aeris Pipe, Exuro Nozzle, Thermocouple Tubus, SiC Navis, Kiln Car Structura, Setter, etc.

-Military Bulletproof Field

-Silicon Carbide Semiconductor: cymba lagana SiC, sic chuck, sic paxillum, sic cassette, sic diffusio tubi, laganum furca, lamina suctus, guideway, etc.

-Silicon Carbide Sigillum Campi: omnia genera signandi anulum, gerentem, fruticem, etc.

- Campus Photovoltaicus: Cantilever Paddle, Molendum Ferocactus, Silicon Carbide Rollerus, etc.

-Lithium Pugna Field

Parametri technicae:

2

Materia Datasheet

材料Materia

R-SiC

使用 温度Opus temperatus (°C)

1600°C (氧化 气氛Oxidizing environment)

1700°C (还原 气氛Reducing environment)

Sic含量SiC content (%)

> 99

自由Si含量Free Si contentus (%)

< 0.1

体积 密度Mole densitatis (g/cm3)

2.60-2.70

气孔率Apparens porositas (%)

< 16

抗压 强度Robora comminuendi (MPa)

> 600

常温 抗弯 强度Frigus inflexio vi (MPa)

80-90 (20°C)

高温 抗弯 强度Inflexio caloris vires (MPa)

90-100 (1400°C)

热膨胀 系数

Scelerisque dilatatio coefficiens @1500°C (10-6/°C)

4.70

导热 系数Scelerisque conductivity @1200°C (W/mK)

23

杨氏 模量Modulus elasticus (GPa)

240

抗热震性Scelerisque inpulsa resistentia

很 好perquam bonum

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