SOI Wafers

Brevis descriptio:

SOI laganum farti instar est cum tribus ordinibus; Incluso strato summo (strato fabrica), media strato oxygenii sepulti (pro strato insulating SiO2) et fundo substrato (mole Pii). SOI lagana producuntur utendi methodo SIMOX et laganum compages technologiae, quae stratas fabricas tenuiores et accuratiores concedit, uniformis crassitudinis et densitatis infimae defectus.

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Product Detail

Product Tags

SOI Wafers (1)

Applicationem agri

1. summus celeritas ambitus

2. Proin machinas

III. High temperatus in circuitu integrated

4. Power cogitationes

5. Minimum potentia integrata circuit

6. MEMS'

7. Maximum voltage ambitum integratum

Item		Argumentum
Super	Azymum (mm)	50/75/100/125/150/200mm±25um
	Arcum/Warp (	<10um
	Particulas (	0.3um<30ea
	Flats / SCARIFICATIO /	Plana vel SCARIFICATIO
	Ore exclusio (mm)	/
Fabrica Stratum 器件层	Fabrica accumsan Type / Dopant 器件层掺杂类型	N-Type/P-Type B/P/Sb/As
	Fabrica accumsan propensionis 器件层晶向	<1-0-0> / <1-1-1> / <1-1-0>
	Machinam accumsan Crassitudo (um)	0.1~300um
	Fabrica accumsan Resistivity (olim•cm)	0.001~100,000 olim-cm
	Fabrica-circulum particularum (	<30ea@0.3
	Fabrica Stratum TTV TTV(	<10um
	Conclusio fabrica Stratum 器件层表面处理	polita
BOX	Sepultus Scelerisque Oxide Crassitudo (um)	50nm(500Å)~15um
Palpate Stratum 衬底	Palpate laganum Type / Dopant 衬底层类型	N-Type/P-Type B/P/Sb/As
	Palpate laganum propensionis 衬底晶向	<1-0-0> / <1-1-1> / <1-1-0>
	Palpate laganum Resistivity (olim•cm)	0.001~100,000 olim-cm
	Palpate laganum Crassitudo (um)	>100um
	Conclusio manubrium laganum 衬底表面处理	polita
SOI lagana specificationum scopos nativus fieri possunt secundum mos exigentias.