commoda
Princeps caliditas oxidationis resistentia
Corrosion resistentia praeclara
Bonum Abrasionis resistentia
Princeps coefficiens caloris conductivity
Levitas, humilis densitas
Alta duritia
Lorem amet.
Applications
-War-repugnans campus: frutex, lamina, sandblasting COLLUM, cyclus oblinit, dolium stridor, etc.
-High Temperature Field: siC Slab, Exstinguitur Fornax Tubus, Radiant Tube, Fuscus, Calefactio Elementum, Rollerus, Radius, Calor Commutator, Frigidi Aeris Pipe, Exuro Nozzle, Thermocouple Tubus, SiC Navis, Kiln Car Structura, Setter, etc.
-Silicon Carbide Semiconductor: cymba lagana SiC, sic chuck, sic paxillum, sic cassette, sic diffusio tubi, laganum furca, patella suctio, guideway, etc.
-Silicon Carbide Sigillum Campi: omnia genera signandi anulum, gerentem, fruticem, etc.
- Campus Photovoltaicus: Cantilever Paddle, Molendum Ferocactus, Silicon Carbide Rollerus, etc.
-Lithium Pugna Field
Corporalia De Proprietatibus Sic
| Property | Precium | Methodus |
| Density | 3.21 g/cc | Sink-natat et dimensio |
| Imprimis calor | 0.66 J/g °K | Pulsus mico laser |
| Flexurae vires | 450 MPa560 MPa | 4 punctum anfractus, RT4 punctum flexus, 1300° |
| Fractura spissitudo | 2.94 MPa m1/2 | Microindentation |
| duritia | 2800 | Vicker's, 500g onus |
| Elasticus ModulusYoung's Modulus | 450 GPa430 GPa | 4 pt flecti, RT4 pt flecti, MCCC °C |
| Frumenti magnitudine | 2 – 10 µm | SEM |
Scelerisque Proprietatibus SiC
| Scelerisque Conductivity | 250 W/m °K | Modus laser mico, RT |
| Scelerisque Expansion (CTE) | 4.5 x 10-6 °K | Locus temp ad 950 °C, silica dilatometer |
Technical Parameters
| Item | Unitas | Data | ||||
| RBSiC(SiSiC) | NBSiC | SSiC | RSiC | OSiC | ||
| SiC content | % | 85 | 75 | 99 | 99.9 | ≥99 |
| Liberum Pii content | % | 15 | 0 | 0 | 0 | 0 |
| Max ministerium temperatus | ℃ | 1380 | 1450 | 1650 | 1620 | 1400 |
| Density | g/cm*3 | 3.02 | 2.75-2.85 | 3.08-3.16 | 2.65-2.75 | 2.75-2.85 |
| Apertum poros | % | 0 | 13-15 | 0 | 15-18 | 7-8 |
| Tendens vires 20℃ | pa | 250 | 160 | 380 | 100 | / |
| Tendens robur 1200℃ | pa | 280 | 180 | 400 | 120 | / |
| Modulus elasticitatis 20℃ | Gpa | 330 | 580 | 420 | 240 | / |
| Modulus elasticitatis 1200℃ | Gpa | 300 | / | / | 200 | / |
| Scelerisque conductivity 1200℃ | W/mK | 45 | 19.6 | 100-120 | 36.6 | / |
| Coefficiens scelerisque expansion | K-1X10-6 | 4.5 | 4.7 | 4.1 | 4.69 | / |
| HV | Kg/mm2 | 2115 | / | 2800 | / | / |
CVD carbida siliconis in superficie exteriore productorum carbidi siliconis ceramici recrystallized potest attingere puritatem plus quam 99,9999% ut obviam necessitatibus clientibus in industria semiconductoris.
