Semiceraproudly inducit suum4" Gallium Oxide Substrates, materialium machinatorum fundamen ut obviam crescentibus postulatis summus perficiendi semiconductoris machinas postularet. Gallium Oxide (Ga2O3) Substrates bandgap ultra-latas praebent, easque aptas faciendi potentiae electronicarum electronicarum, UV optoelectronics, et altae frequentiae machinas.
Features Key:
• ultra-Bandgap: The4" Gallium Oxide Substratesgloriatur fasciculum circiter 4.8 eV, permittens propter eximiam intentionem et tolerantiam temperaturas, signanter inferens materiae semiconductoris traditionalis sicut Pii.
•Princeps Naufragii Voltage: Substratae hae cogitationes praestant ad altiores voltages et potestates operandi, eas perficientes ad applicationes electronicas in potentia electronicarum summarum intentionum.
•Superior Scelerisque Stabilitas: Gallium Oxide substratum praebent conductivity optimas scelerisque, stabilis effectus sub extrema condicione praestans, specimen pro usu in ambitibus exigendis.
•High Material Quality: Cum depresso defectu densitates et cristalli qualitates altae, hae subiectae certam et constantem obtinent observantiam, augendi efficaciam et diuturnitatem cogitationum tuarum.
•Applicationem versatile: Apta amplis applicationibus, inter quas transistores potentiae, Schottky diodes, et UV-C duxerunt cogitationes, innovationes in utraque potestate et in agris optoelectronic ferentes.
Explorare futurum technologiae semiconductoris cum Semicera's4" Gallium Oxide Substrates. Substratae nostrae ordinantur ad applicationes antecedens provehendas, praebentes fidem et efficientiam requisita ad incisuras hodierni machinis. Spera semicera pro qualitate et innovatione in materiis semiconductoribus tuis.
| Items | Productio | Inquisitionis | phantasma |
| Crystal Parameters | |||
| Polytypus | 4H | ||
| Superficiem sexualis errore | <11-20 >4±0.15° | ||
| Electrical Parameters | |||
| Dopant | n-genus Nitrogenium | ||
| Resistentia | 0.015-0.025ohm·cm | ||
| Mechanica Parametri | |||
| Diameter | 150.0±0.2mm | ||
| Crassitudo | 350±25 μm | ||
| Prima plana propensionis | [1-100]±5° | ||
| Prima plana longitudo | 47.5±1.5mm | ||
| Secundarium plana | Nullus | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Arcum | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Frons (Si-face) asperitas (AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Structure | |||
| Micropipe density | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Metallum immunditiae | ≤5E10atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Ante Quality | |||
| Front | Si | ||
| Superficiem metam | Si-face CMP | ||
| Particulas | ≤60ea/laganum (size≥0.3μm) | NA | |
| Exasperat | ≤5ea/mm. Cumulativo longitudo ≤Diameter | Cumulative length≤2*Diameter | NA |
| Orange cortices / foveas / maculas / striations / rimas / contagione | Nullus | NA | |
| Ora eu / indents / fractura / hex p | Nullus | ||
| Polytypus areis | Nullus | Cumulativo area≤20% | Cumulativo area≤30% |
| Ante laser vestigium | Nullus | ||
| Back Quality | |||
| Retro metam | C-faciem CMP | ||
| Exasperat | ≤5ea/mm,Cumulative length≤2*Diameter | NA | |
| Retro defectus (ore eu / indents) | Nullus | ||
| Retro asperitatem | Ra≤0.2nm (5μm*5μm) | ||
| Back laser notati | I mm (a summo ore) | ||
| Ore | |||
| Ore | Chamfer | ||
| Packaging | |||
| Packaging | Epi-paratum in vacuo packaging Multi laganum cassette packaging | ||
| *Nota "NA" significat petitionem nullam Items not mentioned may refer to SEMI-STD. | |||
