Semiceraintroducit850V Princeps Power GaN-on-Si Epi Wafer, interruptio in innovatione semiconductoris. Haec provectus epi laganum principalem efficientiam Gallium Nitride (GaN) cum efficacitate sumptus Siliconis (Si) componit, potens solutionem applicationis summus intentionis creans.
Features Key:
•Princeps intentione Tractantem: machinator ad auxilium usque ad 850V, hoc GaN-on-Si Epi Wafer specimen est ad potentiam electronicam postulandam, ut altiorem efficientiam et effectum habeat.
•Consectetur Power Density: Cum mobilitate superiorum electronicorum et conductivitatis scelerisque, technologia GaN pro pactis consiliis permittit et densitatem potentiam auget.
•Solutio sumptus-effective: Pii leveraging ut substratum, epi laganum hoc jocus sumptus efficax praebet ad lagana tradita GaN lagana, quin ullum afferat quale vel effectum.
•Lata Application dolor: Perfecta ad usum convertentium in potentia, RF amplificatores, aliaque electronica vis alta, ad fidem et vetustatem praestandam.
Summus intentione technology cum Semicera's futura explorare850V Princeps Power GaN-on-Si Epi Wafer. Designatum ad extremas applicationes, hoc productum efficit ut machinas electronicas maxima cum efficientia et constantia operant. Semicera elige propter necessitates semiconductoris generationis proximae.
| Items | Productio | Inquisitionis | phantasma |
| Crystal Parameters | |||
| Polytypus | 4H | ||
| Superficiem sexualis errore | <11-20 >4±0.15° | ||
| Electrical Parameters | |||
| Dopant | n-genus Nitrogenium | ||
| Resistentia | 0.015-0.025ohm·cm | ||
| Mechanica Parametri | |||
| Diameter | 150.0±0.2mm | ||
| Crassitudo | 350±25 μm | ||
| Prima plana propensionis | [1-100]±5° | ||
| Prima plana longitudo | 47.5±1.5mm | ||
| Secundarium plana | Nullus | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Arcum | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Frons (Si-face) asperitas (AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Structure | |||
| Micropipe density | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Metallum immunditiae | ≤5E10atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Ante Quality | |||
| Front | Si | ||
| Superficiem metam | Si-face CMP | ||
| Particulas | ≤60ea/laganum (size≥0.3μm) | NA | |
| Exasperat | ≤5ea/mm. Cumulativo longitudo ≤Diameter | Cumulative length≤2*Diameter | NA |
| Orange cortices / foveas / maculas / striations / rimas / contagione | Nullus | NA | |
| Ora eu / indents / fractura / hex p | Nullus | ||
| Polytypus areis | Nullus | Cumulativo area≤20% | Cumulativo area≤30% |
| Ante laser vestigium | Nullus | ||
| Back Quality | |||
| Retro metam | C-faciem CMP | ||
| Exasperat | ≤5ea/mm,Cumulative length≤2*Diameter | NA | |
| Retro defectus (ore eu / indents) | Nullus | ||
| Retro asperitatem | Ra≤0.2nm (5μm*5μm) | ||
| Back laser notati | I mm (a summo ore) | ||
| Ore | |||
| Ore | Chamfer | ||
| Packaging | |||
| Packaging | Epi-paratum in vacuo packaging Multi laganum cassette packaging | ||
| *Nota "NA" significat petitionem nullam Items not mentioned may refer to SEMI-STD. | |||
