depictio producti
4h-n 4inch 6inch dia100mm sic semen laganum 1mm crassitudine ad augmentum unctionis
Customzied size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/Hy-N 4inch 6inch dia 150mm pii carbidi unico crystallo (sic) substrato laganaS/ Customzied as-cut sic wafersProduction 4inch gradus 4H-N 1.5mm SIC Wafers pro semine crystallo
De Pii Carbide (SiC) Crystal
Silicon carbide (SiC), etiam carborundum notum, est semiconductor continens pii et carbo cum formula chemica SiC.SiC adhibetur in electronicis semiconductoribus machinis quae ad altas temperaturas vel altas voltages vel utrumque agunt. SiC etiam una ex parte DUCTUS momenti, est popularis substratum pro machinis crescentibus, et etiam inservit calori diffundentis in alto. potentia LEDs.
Descriptio
| Property | 4H-SiC, Single Crystal | 6H-SiC, Single Crystal |
| Parameters cancellos | a=3.076 Å c=0.053 Å | a=3.073 Å c=15.117 |
| Stacking Sequentia | ABCB | ABCACB |
| Mohs duritia | ≈9.2 | ≈9.2 |
| Density | 3.21 g/cm3 | 3.21 g/cm3 |
| Therm.Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K |
| Refractio Index @ 750nm | no = 2.61 | no = 2.60 |
| Dielectric Constant | c~9.66 | c~9.66 |
| Scelerisque Conductivity (N-type, 0.02 olim) | a~4.2 W/cm·K@298K |
|
| Scelerisque Conductivity (Semi-insulating) | a~4.9 W/cm·K@298K | a~4.6 W/cm·K@298K |
| Band-gap | 3.23 eV | 3.02 eV |
| Break-down Electrical Field | 3-5×106V/cm | 3-5×106V/cm |
| Saturatio Drift Velocitas | 2.0×105m/s | 2.0×105m/s |
