Morbi pii carbide scapha semiconductor materiae photovoltaicae

Description:

Semicera EnergyTechnology Co., Ltd.est elit principale in lagano specialiter et semiconductor consumables provectus.Tibi dediti sumus ut products summus qualitas, certa, amet, semiconductor vestibulum;photovoltaic industriamet alia prata cognata.

Nostra producta linea includit SiC/TaC productos graphites et ceramicos obductis, varias inclusas materias ut carbidam pii, nitridem pii, et oxydatum aluminium et etc.

Sicut creditum supplementum, momentum consumables in processu fabricando accipimus, et fructus tradendis commisimus, quae maxima signa qualitatum conveniunt ad necessitates clientium nostrorum implendas.


Product Detail

Product Tags

Silius carbide novum genus ceramicorum est magno sumptu effectus et praestantia materiarum proprietatum.Ob features sicut altae roboris et duritiae, caliditas resistentiae, magna conductivity et chemica corrosio scelerisque resistentia, Silicon Carbide omnia media chemica fere sustinere potest.Propterea, SIC late utuntur in fodienda olei, chemica, machinatione et airspace, etiam energia nucleari et militari, peculiares suas postulationes in SIC habent.Aliquid normali applicatione offerre possumus annulos obsignantes ad sentinam, valvam et armaturam tutelarem etc.

Possumus designare et fabricare secundum dimensiones specificas cum bona qualitate et rationabili tempore libera.

_20230719092847

Advantages:

Princeps caliditas oxidationis resistentia

Corrosion resistentia praeclara

Bonum Abrasionis resistentia

Princeps coefficiens caloris conductivity
Levitas, humilis densitas
Alta duritia
Lorem amet.

 

Applicationes:

-War-repugnans campus: frutex, lamina, sandblasting COLLUM, cyclus oblinit, dolium stridor, etc.

-High Temperature Field: siC Slab, Exstinguitur Fornax Tubus, Radiant Tube, Fuscus, Calefaciens Elementum, Rollerus, Tignum, Calor Commutator, Frigidi Aeris Pipe, Exuro Nozzle, Tubus Thermocouple Tubus, SiC Navis, Kiln Car Structura, Setter, etc.

-Military Bulletproof Field

-Silicon Carbide Semiconductor: cymba lagana SiC, sic chuck, sic paxillum, sic cassette, sic diffusio tubi, laganum furca, patella suctio, guideway, etc.

-Silicon Carbide Sigillum Campi: omnia genera signandi anulum, portantes, frutices, etc.

- Campus Photovoltaicus: Cantilever Paddle, Molendum Ferocactus, Silicon Carbide Rollerus, etc.

-Lithium Pugna Field

Pii carbide cristallina navis (3)

Parametri technicae:

2

Materia Datasheet

材料Materia

R-SiC

使用 温度Opus temperatus (°C)

1600°C (氧化 气氛Oxidizing environment)

1700°C (还原 气氛Reducing environment)

Sic含量SiC content (%)

> 99

自由Si含量Free Si contentus (%)

< 0.1

体积 密度Mole densitatis (g/cm3)

2.60-2.70

气孔率Apparens porositas (%)

< 16

抗压 强度Robora comminuendi (MPa)

> 600

常温 抗弯 强度Frigus inflexio vi (MPa)

80-90 (20°C)

高温 抗弯 强度Inflexio caloris vires (MPa)

90-100 (1400°C)

热膨胀 系数

Scelerisque dilatatio coefficiens @ MD°C (10-6/°C)

4.70

导热 系数Scelerisque conductivity @1200°C (W/mK)

23

杨氏 模量Modulus elasticus (GPa)

240

抗热震性Scelerisque inpulsa resistentia

很 好perquam bonum


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