Semiceraproudly dediGa2O3Epitaxy, res publica of-the-ars solutionis designata ad fines potentiae electronicorum et optoelectronicorum impellendos. Hoc provectus epitaxial technologiae singulares proprietates Gallii Oxidei pressit (Ga2O3) ut in applicationibus exigendis perficiendis superiori tradatur.
Features Key:
• Lata Bandgap: Ga2O3Epitaxylineamenta ultra-wide bandgap, sino altiores intentiones naufragii et operationem efficientem in ambitus potentiae altae.
•Princeps Scelerisque Conductivity: Iacuit epitaxialis optimam scelerisque conductivity praebet, operationem stabilem procurans etiam sub condiciones summus temperatus, faciens id specimen pro summus frequentiae machinis.
•Superior Material Quality: Crystal qualitatem cum minimis defectibus consequi, optimal fabrica perficiendi et longivitatis cursus, praesertim in applicationibus criticis ut potentia transistores et detectores UV.
•Versatility in Applications: Apte ad potentiam electronicarum electronicarum, RF applicationes, et ad optoelectronics aptum, certa fundatio pro semiconductoribus generationis proximae cogitationibus providens.
Invenire potentialeGa2O3Epitaxycum solutionibus semicerae eget porttitor. Nostri producti epitaxiales ordinantur ad summa signa qualitatis et effectus, ut cogitationes tuas ad operandum maximam efficientiam et constantiam efficiant. Elige semicera pro malleolo-ore semiconductoris technicae.
| Items | Productio | Inquisitionis | phantasma |
| Crystal Parameters | |||
| Polytypus | 4H | ||
| Superficiem sexualis errore | <11-20 >4±0.15° | ||
| Electrical Parameters | |||
| Dopant | n-genus Nitrogenium | ||
| Resistentia | 0.015-0.025ohm·cm | ||
| Mechanica Parametri | |||
| Diameter | 150.0±0.2mm | ||
| Crassitudo | 350±25 μm | ||
| Prima plana propensionis | [1-100]±5° | ||
| Prima plana longitudo | 47.5±1.5mm | ||
| Secundarium plana | Nullus | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Arcum | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Frons (Si-face) asperitas (AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Structure | |||
| Micropipe density | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Metallum immunditiae | ≤5E10atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Ante Quality | |||
| Front | Si | ||
| Superficiem metam | Si-face CMP | ||
| Particulas | ≤60ea/laganum (size≥0.3μm) | NA | |
| Exasperat | ≤5ea/mm. Cumulativo longitudo ≤Diameter | Cumulative length≤2*Diameter | NA |
| Orange cortices / foveas / maculas / striations / rimas / contagione | Nullus | NA | |
| Ora eu / indents / fractura / hex p | Nullus | ||
| Polytypus areis | Nullus | Cumulativo area≤20% | Cumulativo area≤30% |
| Ante laser vestigium | Nullus | ||
| Back Quality | |||
| Retro metam | C-faciem CMP | ||
| Exasperat | ≤5ea/mm,Cumulative length≤2*Diameter | NA | |
| Retro defectus (ore eu / indents) | Nullus | ||
| Retro asperitatem | Ra≤0.2nm (5μm*5μm) | ||
| Back laser notati | I mm (a summo ore) | ||
| Ore | |||
| Ore | Chamfer | ||
| Packaging | |||
| Packaging | Epi-paratum in vacuo packaging Multi laganum cassette packaging | ||
| *Nota "NA" significat petitionem nullam Items not mentioned may refer to SEMI-STD. | |||
