Descriptio
Graphite Susceptor withPii Carbide Coating, 6 piecesVI pollicis laganum Portitoreme semicera praebet eximiam vetustatem et scelerisque conductivity ad applicationes incrementi epitaxialis summus effectus. Semicera specialitas in provectis susceptoribus ordinatur ad augendae processuum similiaSi EpitaxyetSiC Epitaxyin ambitibus semiconductoribus exigendis certas praestandi effectus.
Haec susceptor specialiter machinator in usu estMOCVD Susceptorsystemata et compatibilitatem cum variis baiulis praebet ut Portitorem PSS Etching, ICP Etching Carrier, et RTP Portitorem. Est specimen productionis Siliconis Monocrystallini et Epitaxial Susceptoris setups DUXERIT, offerens versatility in diversis conformationibus, incluso Barrel Susceptor et Pancake Susceptor designationis.
Graphite Susceptor cum Silicon Carbide Coating applicationes in energia solaris per suam integrationem cum Partibus Photovoltaicis adiuvat et in GaN processibus SiC Epitaxy excellit. Tabellarius laganum 6 inch eius facultatem praebet altam perput, faciens illud instrumentum essentiale fabricarum in industriis semiconductoribus et photovoltaicis.
Principalis Features
I .High puritas SiC graphite iactaret
2. Superior calor resistentia & scelerisque uniformitatem
3. FineSic crystallum iactaretad leni
4. High vetustatem in chemica purgatio
Specificationes principales de CVD-SIC Coatings:
| SiC-CVD | ||
| Density | (g/cc) | 3.21 |
| Flexurae vires | (Mpa) | 470 |
| Scelerisque expansion | (10-6/K) | 4 |
| Scelerisque conductivity | (W/mK) | 300 |
Stipare et Shipping
Facultates copia:
(X) Piece / Mass per mense
Packaging & Delivery:
Stipare: Standard & Strong Pack
Poly pera + Box + Carton + Pallet
Portus:
Ningbo/Shenzhen/Shanghai
Tempus ducere:
| Quantitas (Pieces) | 1-1000 | >1000 |
| Est. Tempus (dies) | 30 | Agenda |
