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Second Half Parts for Low Baffles in Epitaxial Process

Secunda pars dimidiae partis inferioris Baffles in Processu Epitaxial Featured Image
  • Second Half Parts for Low Baffles in Epitaxial Process

Description:

SiC obductis partibus graphitis ad apparatum SiC epitaxialem.

Productum introductio et usus: Tubus vicus conexus, gas transire potest ut basis rotationis lance, temperatura imperium

Fabrica locationis producti: in camera reactionis, non in contactu directo cum lagano

Pelagus products amni: cogitationes potentiae

Principalis terminus forum: nova industria vehicles


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Product Tags

Sic CoatedGraphite Halfmoon Parskey component usus est in processibus semiconductoribus fabricandis, praesertim instrumento epitaxiali SiC.Technologia nostra patentata utimur ad dimidiam partem lunae summae puritatis, bonae uniformitatis et optimae vitae servitii efficiens, necnon altae chemicae resistentiae et possessiones scelerisque stabilitatis.

 
Locus Semicera Opus
Locus operis semicera 2
Apparatus armorum
Rhoncus processus, purgatio chemica, CVD coating
Nostra religio
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