depictio producti
Nostra societas praebetSic coatingoperas processus processus per methodum CVD in superficie graphite, ceramicorum et aliarum materiarum, ita ut gasi speciales in quibus carbo et silicon gravissima temperies continentur, ad altam puritatem SiC molecularum, molecularum in superficie materiarum iactatarum depositarum formando, formando.SIC tegumentum.
Marisque:
1. caliditas oxidationis resistentia;
oxidatio resistentia adhuc valde bona est cum siccus quantus est 1600 C.
2. Puritas alta : factae depositionis vaporis chemicae sub conditione chlorinationis caliditatis.
3. Exesa resistentia: durities alta, superficies compacta, particulae tenuis.
4. Corrosio resistentiae: acidum, alcali, salis et reagentia organica.
Specificationes principales de CVD-SIC Coating
| Sic-CVD Properties | ||
| Crystal Structure | FCC β phase | |
| Density | g/cm | 3.21 |
| duritia | Vickers duritia | 2500 |
| Frumenti Size | μm | 2~10 |
| Puritas chemica | % | 99.99995 |
| Calor Capacitas | J·kg-1 ·K-1 | 640 |
| Sublimatio Temperature | ℃ | 2700 |
| Fortitudo Felix | MPa (RT 4-punctum) | 415 |
| Modulus | Gpa (4pt bend, 1300℃) | 430 |
| Scelerisque Expansion (CTE) | 10-6K-1 | 4.5 |
| Scelerisque conductivity | (W/mK) | 300 |
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