Graphite Suscepctor cum Silicon Carbide Coating Ferocactus Tray

Graphite Suscepctor cum Silicon Carbide Coating Ferocactus Ipsumque Featured Image

Brevis descriptio:

Semicera praebet facultatem comprehensivam susceptorum et componentium graphitarum destinatorum variis reactoribus epitaxy.

Per opportunas societates cum industria ducens OEMs, ampla peritia materiarum, et facultates fabricandi provectas, Semicera consilia formandam tradit ad specifica requisita applicationis tuae. Nostrum officium ad excellentiam efficit ut solutiones optimas recipias pro necessitate epitaxy reactoris.

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Descriptio

Societas nostra SiC efficiens operas processus per methodum CVD in superficie graphitarum, ceramicorum et aliarum materiarum praebet, ut gasi speciales in caliditate carbonis et siliconis reant, ad altam puritatem SiC molecularum, molecularum in superficie materiarum iactatarum depositarum; formatam SIC tutela iacuit.

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Principalis Features

I .High puritas SiC graphite iactaret

2. Superior calor resistentia & scelerisque uniformitatem

3. teres SiC crystal obductis ad superficiem levem

4. High vetustatem in chemica purgatio

Specificationes principales de CVD-SIC Coating

Sic-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm	3.21
duritia	Vickers duritia	2500
Frumenti Size	μm	2~10
Puritas chemica	%	99.99995
Calor Capacitas	J·kg-1 ·K-1	640
Sublimatio Temperature	℃	2700
Fortitudo Felix	MPa (RT 4-punctum)	415
Modulus	Gpa (4pt bend, 1300℃)	430
Scelerisque Expansion (CTE)	10-6K-1	4.5
Scelerisque conductivity	(W/mK)	300