Descriptio
Societas nostra processus SiC efficiens officia per methodum CVD in superficie graphitarum, ceramicorum et aliarum materiarum praebet, ita ut gasi speciales carbo et silicon in caliditate continentes agunt ad altam puritatem SiC moleculae, moleculae in superficie materiae iactatae depositae; formatam SIC tutela iacuit.
Marisque
I .High puritas SiC graphite iactaret
2. Superior calor resistentia & scelerisque uniformitatem
3. teres SiC crystal obductis ad superficiem levem
4. High vetustatem contra eget dictum
Specificationes principales de CVD-SIC Coating
Sic-CVD Properties | ||
Crystal Structure | FCC β phase | |
Density | g/cm | 3.21 |
duritia | Vickers duritia | 2500 |
Frumenti Size | μm | 2~10 |
Puritas chemica | % | 99.99995 |
Calor Capacitas | J·kg-1 ·K-1 | 640 |
Sublimatio Temperature | ℃ | 2700 |
Fortitudo Felix | MPa (RT 4-punctum) | 415 |
Modulus | Gpa (4pt bend, 1300℃) | 430 |
Scelerisque Expansion (CTE) | 10-6K-1 | 4.5 |
Scelerisque conductivity | (W/mK) | 300 |