Silicon Carbide Substrates|SiC Wafers

Brevis descriptio:

Semicera Energy Technologia Co, Ltd. est principale in lagano speciali et semiconductori consumabilium provectorum. Nos dediti sumus praestantes qualitates, certas, et porttitor productos ad semiconductorem fabricandum, photovoltaicam industriam aliosque cognatos campos comparandos.

Nostra producta linea includit SiC/TaC productos graphites et ceramicos obductis, varias inclusas materias ut carbidam pii, nitridem pii, et oxydatum aluminium et etc.

In praesenti sola sumus opificem ad puritatem 99,9999% SiC efficiens et 99,9% recrystallina carbida pii. Max SiC efficiens longitudinem facere possumus 2640mm.

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Silicon carbide (SiC) una cristallus materia magnam lacunam latitudo (~Si 3 times), princeps scelerisque conductivity (~Si 3.3 temporibus vel GaAs 10 times), alta electronica satietatem migrationis rate (~Si 2.5 times), alta naufragii electrici ager (Si X temporibus vel GaAs V temporibus) et aliae proprietates praestantes.

SiC cogitationes irreparabiles utilitates habent in campo caliditatis, magnae pressionis, altae frequentiae, altae potentiae electronicarum machinarum et applicationes extremae circumscriptiones ut aerospace, militaris, nuclei, etc., supplent defectus semiconductorum traditionalium machinarum materialium in practica. applicationes, et paulatim amet potentiae semiconductores fiunt.

4H-SiC Silicon carbide specifications

Item项目	Specifications参数
Polytypus 晶型	4H -SiC	6H- Sic
Diameter 晶圆直径	2 inch \| 3 inch \| 4 inch \| 6inch	2 inch \| 3 inch \| 4 inch \| 6inch
Crassitudo 厚度	330 μm ~ 350 μm	330 μm ~ 350 μm
Conductivity 导电类型	N - genus / Semi-insulating N型导电片/ 半绝缘片	N - genus / Semi-insulating N型导电片/ 半绝缘片
Dopant 掺杂剂	N2 ( Nitrogen ) V ( Vanadium )	N2 ( Nitrogen ) V ( Vanadium )
propensio 晶向	Ad axem <0001> Off axis <0001> off 4°	Ad axem <0001> Off axis <0001> off 4°
Resistentia 电阻率	0.015 ~ 0.03 ohm-cm (4H-N)	0.02 ~ 0.1 ohm-cm (6H-N)
Micropipe densitas (MPD) 微管密度	≤10/cm2 ~ ≤1/cm2	≤10/cm2 ~ ≤1/cm2
TTV 总厚度变化	≤ 15 μm	≤ 15 μm
Arcum / Warp 翘曲度	≤25 μm	≤25 μm
Superficies 表面处理	DSP/SSP	DSP/SSP
Gradus 产品等级	Productio / Research gradus	Productio / Research gradus
Crystal Stacking Sequence 堆积方式	ABCB	ABCABC
cancellos parametri 晶格参数	a=3.076A , c=0.053A	a=3.073A, c=15.117A
Eg/eV(Band-gap) 禁带宽度	3.27 eV	3.02 eV
ε(Dielectric Constant) 介电常数	9.6	9.66
Refractio Index 折射率	n0 =2.719 ne =2.777	n0 =2.707 , ne = 2.755

6H-SiC Pii Carbide specifications

Item项目	Specifications参数
Polytypus 晶型	6H-SiC
Diameter 晶圆直径	4 inch \| 6inch
Crassitudo 厚度	350μm ~ 450μm
Conductivity 导电类型	N - genus / Semi-insulating N型导电片/ 半绝缘片
Dopant 掺杂剂	N2 ( Nitrogen ) V ( Vanadium )
propensio 晶向	<0001> off 4°± 0.5°
Resistentia 电阻率	0.02 ~ 0.1 ohm-cm (6H-N Type)
Micropipe densitas (MPD) 微管密度	≤ 10/cm2
TTV 总厚度变化	≤ 15 μm
Arcum / Warp 翘曲度	≤25 μm
Superficies 表面处理	Si Face: CMP, Epi-Redy C Face: Optica Poloniae
Gradus 产品等级	Investigatio gradus