Silicon carbide (SiC) una materia crystallina magnam cohortem lacunam latitudinem habet (~Si 3 times), princeps scelerisque conductivity (~Si 3.3 temporibus vel GaAs 10 times), alta electronica satietatem migrationis rate (~Si 2.5 times), alta naufragii electrica ager (Si X temporibus vel GaAs V temporibus) et aliae proprietates praestantes.
SiC machinis irreparabiles utilitates habent in campo caliditatis, magnae pressionis, altae frequentiae, altae potentiae electronicarum machinarum et applicationes extremae circumscriptiones ut aerospace, militaris, nuclei, etc., supplent defectus semiconductoris traditionalis machinarum materialium in practica. applicationes, et paulatim amet potentiae semiconductores fiunt.
4H-SiC Silicon carbide specifications
Item项目 | Specifications参数 | |
Polytypus | 4H -SiC | 6H- Sic |
Diameter | 2 inch |3 inch |4 inch |6inch | 2 inch |3 inch |4 inch |6inch |
Crassitudo | 330 μm ~ 350 μm | 330 μm ~ 350 μm |
Conductivity | N - genus / Semi-insulating | N - genus / Semi-insulating |
Dopant | N2 ( Nitrogen ) V ( Vanadium ) | N2 ( Nitrogen ) V ( Vanadium ) |
propensio | Ad axem <0001> | Ad axem <0001> |
Resistentia | 0.015 ~ 0.03 ohm-cm | 0.02 ~ 0.1 ohm-cm |
Micropipe densitas (MPD) | ≤10/cm2 ~ ≤1/cm2 | ≤10/cm2 ~ ≤1/cm2 |
TTV | ≤ 15 μm | ≤ 15 μm |
Arcum / Warp | ≤25 μm | ≤25 μm |
Superficies | DSP/SSP | DSP/SSP |
Gradus | Productio / Research gradus | Productio / Research gradus |
Crystal Stacking Sequence | ABCB | ABCABC |
cancellos parametri | a=3.076A , c=0.053A | a=3.073A, c=15.117A |
Eg/eV(Band-gap) | 3.27 eV | 3.02 eV |
ε(Dielectric Constant) | 9.6 | 9.66 |
Refractio Index | n0 =2.719 ne =2.777 | n0 =2.707 , ne = 2.755 |
6H-SiC Pii Carbide specifications
Item项目 | Specifications参数 |
Polytypus | 6H-SiC |
Diameter | 4 inch |6inch |
Crassitudo | 350μm ~ 450μm |
Conductivity | N - genus / Semi-insulating |
Dopant | N2 ( Nitrogen ) |
propensio | <0001> off 4°± 0.5° |
Resistentia | 0.02 ~ 0.1 ohm-cm |
Micropipe densitas (MPD) | ≤ 10/cm2 |
TTV | ≤ 15 μm |
Arcum / Warp | ≤25 μm |
Superficies | Si Face: CMP, Epi-Redy |
Gradus | Investigatio gradus |