Nostra societas praebetSic coatingopera processus processus in superficie graphite, ceramicorum et aliarum materiarum methodo CVD, ita ut gasorum specialium carbo et silicon continentes caliditas calidissimae ad puritatem Sic moleculae altae obtineant, quae in superficie materiarum iactatarum deponi possunt ut formant.SiC tutela iacuitdolii genus hy pnotic.
Praecipua lineamenta:
I .High puritas SiC graphite iactaret
2. Superior calor resistentia & scelerisque uniformitatem
3. FineSic crystallum iactaretad leni
4. High vetustatem in chemica purgatio
Principalis FormulariumCVD-SIC Coating
Sic-CVD Properties | ||
Crystal Structure | FCC β phase | |
Density | g/cm | 3.21 |
duritia | Vickers duritia | 2500 |
Frumenti Size | μm | 2~10 |
Puritas chemica | % | 99.99995 |
Calor Capacitas | J·kg-1 ·K-1 | 640 |
Sublimatio Temperature | ℃ | 2700 |
Fortitudo Felix | MPa (RT 4-punctum) | 415 |
Modulus | Gpa (4pt bend, 1300℃) | 430 |
Scelerisque Expansion (CTE) | 10-6K-1 | 4.5 |
Scelerisque conductivity | (W/mK) | 300 |