GaAs Wafers|GaAs Epi Wafers| Galllium Arsenide Substrates

GaAs Wafers|GaAs Epi Wafers| Galllium Arsenide Substrat Imaginum Featured

Brevis descriptio:

Semicera Energy Technologia Co, Ltd. est principale in lagano speciali et semiconductori consumabilium provectorum. Nos dediti sumus praestantes qualitates, certas, et porttitor productos ad semiconductorem fabricandum, photovoltaicam industriam aliosque cognatos campos comparandos.

Nostra producta linea includit SiC/TaC productos graphites et ceramicos obductis, varias inclusas materias ut carbidam pii, nitridem pii, et oxydatum aluminium et etc.

In praesenti sola sumus opificem ad puritatem 99,9999% SiC efficiens et 99,9% recrystallina carbida pii. Max SiC efficiens longitudinem facere possumus 2640mm.

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GaAs subiectae divisae sunt in conductivum et semiinsulantem, quae late in laser (LD), semiconductor levis emittens diode (LED), prope laser infrared, quantum valens potentia laseris et summus efficientia tabulae solaris. HEMT et HBT astulas pro radar, proin, unda millimetre vel ultra-celeritate computatorum et communicationum opticorum; Instrumenta frequentia radiophonica pro communicatione wireless communicationis, 4G, 5G, communicationis satellite, WLAN.

Nuper gallium arsenidum substratum etiam magnum progressum fecerunt in mini-LED, Micro-LED, et red LED, et late in AR/VR machinis gestabilibus usi sunt.

Diameter 晶片直径	50mm \| 75mm \| 100mm \| 150mm
Incrementum Methodi 生长方式	LEG液封直拉法 VGF垂直梯度凝固法
laganum Crassitudo 厚度	350 um~ 625 um
propensio 晶向	<100> / <111> / <110> vel alii
Conductive Type 导电类型	P - type / N - type / Semi-insulating
Typus / Dopant 掺杂剂	Zn/Si/undod
Carrier Concentration 载流子浓度	1E17 ~ 5E19 cm-3
Resistentia ad RT 室温电阻率(olim • cm)	≥1E7 pro SI
Mobilitas 迁移率(cm2/V•Sec)	≥4000
EPD (Density Pit Etch) 腐蚀坑密度	100~1E5
TTV 总厚度变化	≤ 10 um
Arcum / Warp 翘曲度	≤ 20 um
Superficiem Conclusio 表面	DSP/SSP
Laser Mark 激光码
Gradus 等级	Epi politi gradus / mechanica gradus