Nostra societas praebetSic coatingofficia processus in superficie graphite, ceramicorum et aliarum materiarum methodo CVD, ita ut gasi speciales carbo et silicon continentes gravissimo temperie agere possint ad puritatem altam Sic moleculae obtinendam, quae in superficie materiarum iactatarum deponi possunt, ut formant.SiC tutela iacuitpro epitaxy dolii genus hy pnotic.
Marisque:
I .High puritas SiC graphite iactaret
2. Superior calor resistentia & scelerisque uniformitatem
3. FineSic crystallum iactaretad leni
4. High vetustatem contra eget dictum
Principalis FormulariumCVD-SIC Coating
| Sic-CVD Properties | ||
| Crystal Structure | FCC β phase | |
| Density | g/cm | 3.21 |
| duritia | Vickers duritia | 2500 |
| Frumenti Size | μm | 2~10 |
| Puritas chemica | % | 99.99995 |
| Calor Capacitas | J·kg-1 ·K-1 | 640 |
| Sublimatio Temperature | ℃ | 2700 |
| Fortitudo Felix | MPa (RT 4-punctum) | 415 |
| Modulus | Gpa (4pt bend, 1300℃) | 430 |
| Scelerisque Expansion (CTE) | 10-6K-1 | 4.5 |
| Scelerisque conductivity | (W/mK) | 300 |
