SiC Coated Graphite Base Susceptores pro MOCVD

Brevis descriptio:

Superior SiC Coated Graphite Base Susceptores pro MOCVD per Semicera, destinati ad verterent processuum incrementi semiconductoris tui. Status semicerae susceptoris artis, graphitam basim graphiticam alto qualitatis SiC linitam facere, singularis effectus et efficaciam in applicationibus MOCVD praebet.


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Descriptio

SiC Coated Graphite Base Susceptoresnam MOCVD e semicera machinatur ad eximiam observantiam in processibus epitaxialibus incrementi praebendam. Summus qualitas carbidi siliconis in basi graphite vestitur, stabilitatem, durabilitatem, et optimas conductivitates scelerisque in MOCVD (Metal Organici Depositio Vaporis Chemical Organici) efficit. Utendo semicera porttitor suscipit technologiam, consectetur subtilitatem et efficientiam consequi potesSi EpitaxyetSiC Epitaxyutilibus.

haecMOCVD Susceptoressemiconductorem essentialium partium sustineat range ordinantur, utPSS Etching Portitorem, ICP Etching PortitoremetRTP Portitoremeosque versatiles pro variis operibus erigendo et epitaxialibus faciens. Semicera munus altum signa efficit ut hi susceptores severiores exigentiis productionis semiconductoris moderni occurrant.

Specimen pro usu inDUXERIT EpitaxialSusceptor, Barrel Susceptor, et Processus Silicon Monocrystallini, isti susceptores pro diversis magnitudinibus lagani, excepto Pancake Susceptoris configurationibus. Valde efficaces sunt in Partibus Photovoltaicis tractandis, easque efficaces component in evolutione cellularum solarium efficientium.

Praeter, SiC Coated Graphite Base Susceptores pro MOCVD optimizantur pro GaN in Epitaxy SiC, altam convenientiam cum materiae semiconductore provectae offerentis. Utrum in melius es focused cedit vel augendae qualitatem epitaxialis incrementi, semicerae susceptores praebent fidem et effectus necessarii ad successum in summo technicae industriae.

 

Principalis Features

I .High puritas SiC graphite iactaret

2. Superior calor resistentia & scelerisque uniformitatem

3. FineSic crystallum iactaretad leni

4. High vetustatem in chemica purgatio

 

Specificationes principales de CVD-SIC Coatings:

SiC-CVD
Density (g/cc) 3.21
Flexurae vires (Mpa) 470
Scelerisque expansion (10-6/K) 4
Scelerisque conductivity (W/mK) 300

Stipare et Shipping

Facultates copia:
(X) Piece / Mass per mense
Packaging & Delivery:
Stipare: Standard & Strong Pack
Poly pera + Box + Carton + Pallet
Portus:
Ningbo/Shenzhen/Shanghai
Tempus ducere:

Quantitas (Pieces)

1-1000

>1000

Est. Tempus (dies) 30 Agenda
Locus Semicera Opus
Locus operis semicera 2
Apparatus armorum
Rhoncus processus, purgatio chemica, CVD coating
Semicera Ware Domus
Nostra religio

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